The goal of the workshop us to provide an international forum for thorough and broad-ranging discussion of the techniques for measurement, characterization and modeling of the one and two-dimensional aspects of ultra-shallow junctions, primarily in silicon devices. The focus of the workshop is on the limitations of present-day analytic techniques and on progress towards more advanced capabilities for the analysis of ever shallower and more abrupt doping profiles. This forum will review techniques that probe atomic composition and electrical activation of ultra-shallow junctions. Additional discussions will review the status of techniques for analysis of lattice damage profiles and analytic models that relate two-dimensional dopant distributions to enhanced dopant diffusion from the production of point defects. Papers are also encouraged on the interpretation and correlation of device characteristics with two-dimensional profiles. Special emphasis will also be on bringing together specialists in analytic methods with those who are developing atomic-level models of transient-enhanced dopant diffusion and activation. In addition, we encourage the participation of device engineers who are developing advanced technologies where two-dimensional profile control is critical. The goal here is to build a closer link between the data requirements for advanced silicon process and device modeling, the capabilities of analytic techniques, and the characteristics of ULSI devices.

The workshop will consist of invited review papers, contributed papers (in both oral and poster formats), and focused topical discussions. Plans are also underway to hold a short course program on Sunday, March 28, prior to the start of the workshop.

Papers are encouraged in all of the relevant topics described above, and in particular:

Sputter Depth Profiling: SIMS and post-ionization methods, techniques for enhanced depth resolution and dynamic range with an emphasis on 2D profiling.

Spreading Resistance Measurements and Other Characterization Methods: contact modeling, ultra-shallow beveling, extraction of carrier concentrations, C-V profiling, Hall profiling, PAD, TW, with an emphasis on 2D profiles.

Process Characterization and Modeling: Atomic profiles, implant damage, electrical activation, impurity, cluster and point defect modeling, with an emphasis on how lattice damage affects 2D diffusion.

Microscopy: SEM, TEM, STM/AFM, electrochemical etching methods, concentration resolution issues.

Device characterization: methods for determining effective channel length, 2D profile extraction from device characteristics, impact of 2D dopant profiles on devices.

The number of participants will be limited to approximately 200 to optimize opportunities for interaction.

Prospective authors should submit a 200 word abstract to the publications chair by September 15, 1998. Authors of accepted papers will be notified by November 1, 1998. Authors will submit a camera-ready paper for the proceedings volume (available at the conference) by January 1, 1999. The papers will be formatted according to a template which will be sent with the letter of acceptance and will be 6-8 pages in length, including text, figures, and references. Papers presented at the workshop will be reviewed for publication in the J. Vac. Sci. Technol.-B.

Technical Co-Chair:
Richard B. Fair
Department of ECE
Duke University
Durham, NC, 27708, USA
Tel: 919-660-5277
Fax: 919-660-5221


Technical Co-Chair:
Wilfried Vandervorst
IMEC
Kapeldreef 75
Leuven, B-3001, Belgium
Tel: 32-16-281286
Fax: 32-16-281501


Publications Chair:
Larry Larson
SEMATECH
2706 Montopolis
Austin, TX, 78741, USA
Tel: 512-356-7145
Fax: 512-356-7640


Arrangements Chair:
Gary McGuire
MCNC
PO Box 12889
Research Triangle Park, NC, 27709, USA
Tel: 919-248-1910
Fax: 919-248-1455


For additional information, or if you would like to receive the
Preliminary program when it is available, please contact:

Angela Mulligan
USJ-99 Registration Coordinator
American Vacuum Society
120 Wall St, 32nd Floor
NY, NY, 10005-3993, USA
Tel: 212-248-0200
Fax: 212-248-0245